HT Semiconductor pxt2222a free download

File name pxt2222a.pdf

PXT2222A TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10 A,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0. 01 A Emitter cut-off current IEBO VEB= 5V , IC=0 0. 01 A hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 DC current gain hFE(4) VCE=10V, IC= 150mA 100 300 hFE(5) VCE=1V, IC= 150mA 50 hFE(6) VCE=10V, IC= 500mA 40 VCE(sat) IC=500mA, IB= 50mA 1 V Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.3